 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BUZ 345 SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated Pin 1 G Pin 2 D Pin 3 S Type BUZ 345 VDS 100 V ID 41 A RDS(on) 0.045 Package TO-218 AA Ordering Code C67078-S3121-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 41 Unit A ID IDpuls 164 TC = 28 C Pulsed drain current TC = 25 C Avalanche current,limited by Tjmax Avalanche energy,periodic limited by Tjmax Avalanche energy, single pulse IAR EAR EAS 41 18 mJ ID = 41 A, VDD = 25 V, RGS = 25 L = 249.9 H, Tj = 25 C Gate source voltage Power dissipation 280 VGS Ptot 20 150 V W TC = 25 C Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Semiconductor Group Tj Tstg RthJC RthJA -55 ... + 150 -55 ... + 150 0.83 75 E 55 / 150 / 56 C K/W 1 07/96 BUZ 345 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 100 3 0.1 10 10 0.04 4 V VGS = 0 V, ID = 0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) 2.1 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS 1 100 A VDS = 100 V, VGS = 0 V, Tj = 25 C VDS = 100 V, VGS = 0 V, Tj = 125 C Gate-source leakage current IGSS 100 nA 0.045 VGS = 20 V, VDS = 0 V Drain-Source on-resistance RDS(on) VGS = 10 V, ID = 26 A Semiconductor Group 2 07/96 BUZ 345 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 10 20 1800 560 270 - S pF 2700 840 400 ns 30 45 VDS 2 * ID * RDS(on)max, ID = 26 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Rise time tr 110 165 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 300 390 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Fall time tf 150 195 VDD = 30 V, VGS = 10 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 345 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.6 120 0.6 41 164 V 1.8 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 82 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 345 Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 10 V 45 A 160 W Ptot ID 120 35 30 100 25 80 20 60 15 10 5 0 20 40 60 80 100 120 C 160 0 20 40 60 80 100 120 C 160 40 20 0 0 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 A K/W t = 7.4s p 10 s ID 10 2 ZthJC 10 -1 / I D DS (o n) = V DS 100 s R 1 ms D = 0.50 10 ms 0.20 10 -2 10 1 0.10 0.05 single pulse 0.02 0.01 10 0 0 10 DC 10 1 V 10 2 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 345 Typ. output characteristics ID = (VDS) parameter: tp = 80 s 100 A Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.14 Ptot = 150W l kj i VGS [V] a 4.0 b 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 a b c d e f g 0.12 ID 80 70 60 50 40 30 20 RDS (on)0.11 0.10 0.09 0.08 0.07 0.06 h hc d e f g fg h i e j k 0.05 0.04 0.03 j i dl c 10 0 0 a 0.02 VGS [V] = b 1 2 3 4 5 6 7 8 V 10 0.01 0.00 0 a 4.5 4.0 5.0 b 5.5 c 6.0 d 6.5 e f 7.0 7.5 g 8.0 h i j 9.0 10.0 20.0 10 20 30 40 50 60 70 A 90 VDS ID Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 50 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 24 S 20 ID 40 35 gfs 18 16 30 25 20 15 14 12 10 8 6 10 4 5 0 0 2 0 1 2 3 4 5 6 7 8 V 10 0 5 10 15 20 25 30 35 A ID 45 VGS Semiconductor Group 6 07/96 BUZ 345 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 26 A, VGS = 10 V 0.14 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 V 4.0 0.12 98% RDS (on)0.11 0.10 0.09 0.08 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.00 -60 VGS(th) 3.6 3.2 2.8 2.4 typ 2% 98% typ 2.0 1.6 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 160 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 1 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 nF C 10 0 A Ciss IF 10 2 Coss Crss 10 -1 10 1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -2 0 10 0 0.0 5 10 15 20 25 30 V VDS 40 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 345 Avalanche energy EAS = (Tj ) parameter: ID = 41 A, VDD = 25 V RGS = 25 , L = 249.9 H 300 mJ 260 Typ. gate charge VGS = (QGate) parameter: ID puls = 62 A 16 V EAS 240 220 200 180 160 140 120 100 80 60 40 20 0 20 VGS 12 0,2 VDS max 10 0,8 VDS max 8 6 4 2 0 40 60 80 100 120 C 160 0 20 40 60 80 100 nC 130 Tj Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 120 V 116 V(BR)DSS 114 112 110 108 106 104 102 100 98 96 94 92 90 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 07/96 BUZ 345 Package Outlines TO-218 AA Dimension in mm Semiconductor Group 9 07/96 |
Price & Availability of BUZ345
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |